ddtc114elp document number: ds30945 rev. 7 - 2 1 of 5 www.diodes.com february 2011 ? diodes incorporated ddtc114elp pre-biased (r1 = r2) small signal surface mount 100ma npn transistor features ? epitaxial planar die construction ? ultra-small leadless surface mount package ? ideally suited for automated assembly processes ? ?lead free?, rohs compliant (note 1) ? halogen and antimony free "green" device (note 2) ? qualified to aec-q101 standards for high reliability part number r1 (nom) r2 (nom) marking ddtc114elp 10k 10k n5 mechanical data ? case: dfn1006-3 ? case material: molded plastic, "green" molding compound. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020 ? terminals: finish - nipdau over copper leadframe. solderable per mil-std-202, method 208 ? weight: 0.0009 grams (approximate) ordering information (note 3) product marking reel size (inches) tape width (mm) quantity per reel DDTC114ELP-7 n5 7 8 3,000 DDTC114ELP-7b n5 7 8 10,000 notes: 1. no purposefully added lead. 2. diodes inc's "green" policy can be found on our website at http://www.diodes.com. 3. for packaging details, go to our website at http://www.diodes.com. marking information in c 3 e 2 1 r 2 r 1 b gnd out bottom view device s y mbol top view pin-out in b 1 2 3 c e gnd out equivalent inverter circuit dfn1006-3 c e b n5 = product type marking code DDTC114ELP-7 DDTC114ELP-7b top view bar denotes base and emitter side top view dot denotes collector side n5 n5
ddtc114elp document number: ds30945 rev. 7 - 2 2 of 5 www.diodes.com february 2011 ? diodes incorporated ddtc114elp maximum ratings @t a = 25c unless otherwise specified characteristic symbol value unit supply voltage v cc 50 v input voltage v in -10 to +40 v output current i o 50 ma collector current i c ( max ) 100 ma thermal characteristics @t a = 25c unless otherwise specified characteristic symbol value unit power dissipation (note 4) p d 250 mw power derating above 25c p de r 2 mw/c thermal resistance, junction to ambient air (note 4) (equivalent to one heated junction of npn) r ja 500 c/w operating and storage temperature range t j , t stg -55 to +150 c electrical characteristics @t a = 25c unless otherwise specified characteristic symbol min typ max unit test condition off characteristics (note 5) collector-base breakdown voltage bv cbo 50 ? ? v i c = 10 a, i e = 0 collector-emitter breakdown voltage bv ceo 50 ? ? v i c = 1.0ma, i b = 0 emitter-base breakdown voltage bv ebo 5 ? ? v i e = 50 a, i c = 0 collector cutoff current i cex ? ? 0.5 a v ce = 50v, v eb ( off ) = 3.0v base cutoff current (i be x ) i bl ? ? 0.5 a v ce = 50v, v eb ( off ) = 3.0v collector-base cut off current i cbo ? ? 0.5 a v cb = 50v, i e = 0 collector-emitter cut off current, i o ( off ) i ceo ? ? 1 a v cb = 50v, i b = 0 emitter-base cut off current i ebo ? ? 0.4 ma v eb = 4v, i c = 0 input off voltage v i ( off ) ? 1.16 0.5 v v cc = 5v, i o = 100ua on characteristics (notes 5 & 6) dc current gain h fe 10 ? ? ? v ce = 5v, i c = 1ma 15 ? ? ? v ce = 5v, i c = 2ma 60 ? ? ? v ce = 5v, i c = 10ma 100 ? ? ? v ce = 5v, i c = 50ma 90 ? ? ? v ce = 5v, i c = 70ma collector-emitter saturation voltage v ce(sat) ? ? 0.15 v i c = 10ma, i b = 1ma ? ? 0.2 v i c = 50ma, i b = 5ma ? ? 0.25 v i c = 50ma, i b = 2.5ma ? ? 0.25 v i c = 50ma, i b = 10ma ? ? 0.3 v i c = 70ma, i b = 10ma base-emitter turn-on voltage v be(on) ? ? 0.85 v v ce = 5v, i c = 2ma ? ? 0.95 v v ce = 5v, i c = 10ma base-emitter saturation voltage v be(sat) ? ? 0.98 v i c = 10ma, i b = 1ma, v ce = 5v ? ? 1.2 v i c = 50ma, i b = 5ma, v ce = 5v input-on voltage v i ( on ) 2.5 1.6 ? v v o = 0.3v, i o = 50ma input current i i ? ? 0.88 ma v i = 5v output on voltage (same as v ce ( sat ) ) v o ( on ) ? ? 0.3 v i i = 2.5ma, i o = 50ma input resistance r1 7 10 13 k ? resistance ratio (r2/r1) 0.8 1 1.2 ? ? small signal characteristics current gain-bandwidth product f t ? 250 ? mhz v ce = 10v, i e = 5ma, f = 1mhz notes: 4. device mounted on fr-4 pcb, 1? x 0.85? x 0.062? 5. short duration pulse test used to minimize self-heating effect. pulse test: pulse width tp < 300 s, duty cycle, d 2%. 6. guaranteed by design.
ddtc114elp document number: ds30945 rev. 7 - 2 3 of 5 www.diodes.com february 2011 ? diodes incorporated ddtc114elp 0 50 100 150 200 250 300 0 25 50 75 100 125 150 175 t , ambient temperature ( c) fig. 1 power dissipation vs. ambient temperature a p , p o we r dissi p a t i o n (mw) d r = 500 c/w ja 0 50 100 150 200 250 0.1 1 10 100 1,000 v = 5v ce h, d c c u r r en t g ain fe i , collector current (ma) fig. 2 typical dc current gain vs. collector current c t = 150 c a t = 85 c a t = -55 c a t = 25 c a 0.01 0.1 1 10 0.1 1 10 100 i/i = 10 cb v , collector-emitter saturation voltage (v) ce(sat) i , collector current (ma) fig. 3 typical collector emitter saturation voltage vs. collector current c t = 150 c a t = 85 c a t = -55 c a t = 25 c a 0 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09 0.1 01 2 34 56 78 910 v , collector emitter voltage (v) fig. 4 ce typical collector current vs. collector emitter voltage i, c o llect o r cu r r ent (a) c i = 1.0ma b i = 0.8ma b i = 0.7ma b i = 0.6ma b i = 0.9ma b i = 0.5ma b i = 0.4ma b i = 0.3ma b i = 0.2ma b i = 0.1ma b 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 -60-300306090120150 v = 0.3v o i = 5ma o t , ambient temperature ( c) fig. 5 typical input voltage vs. ambient temperature a v, in p u t v o l t a g e (v) i(on) 0 1.5 3 4.5 6 7.5 9 10.5 12 13.5 15 0.1 1 10 100 v , base-emi t t e r v o l t a g e (v) be i , collector current (ma) fig. 6 typical base-emitter voltage vs. collector current c v = 5v ce t = 150 c a t = 85 c a t = -55 c a t = 25 c a
ddtc114elp document number: ds30945 rev. 7 - 2 4 of 5 www.diodes.com february 2011 ? diodes incorporated ddtc114elp 0 3 6 9 12 15 18 21 24 27 30 0.1 1 10 100 i/i = 10 cb v , base-emitter saturation voltage (v) be(sat) i , collector current (ma) fig. 7 typical base emitter saturation voltage vs. collector current c package outline dimensions suggested pad layout dfn1006-3 dim min max typ a 0.47 0.53 0.50 a1 0 0.05 0.03 b1 0.10 0.20 0.15 b2 0.45 0.55 0.50 d 0.95 1.075 1.00 e 0.55 0.675 0.60 e ? ? 0.35 l1 0.20 0.30 0.25 l2 0.20 0.30 0.25 l3 ? ? 0.40 all dimensions in mm dimensions value (in mm) z 1.1 g1 0.3 g2 0.2 x 0.7 x1 0.25 y 0.4 c 0.7 l2 a1 e b2 l1 l3 d e b1 a y c g1 g2 x x 1 z
ddtc114elp document number: ds30945 rev. 7 - 2 5 of 5 www.diodes.com february 2011 ? diodes incorporated ddtc114elp important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries rese rve the right to make modifications, enhanc ements, improvements, corrections or ot her changes without further notice to this document and any product descri bed herein. diodes incorporated does not assume any liability arising out of the application or use of this document or an y product described herein; neither does di odes incorporated convey any license under its patent or trademark rights, nor the rights of others. any customer or us er of this document or products described herein in such applica tions shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthoriz ed sales channel. should customers purchase or use diodes inco rporated products for any unintended or una uthorized application, customers shall i ndemnify and hold diodes incorporated and its representativ es harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death a ssociated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. life support diodes incorporated products are specifically not authorized for use as critical component s in life support devices or systems without the express written approval of the chief executive offi cer of diodes incorporated. as used herein: a. life support devices or syst ems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when proper ly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support dev ice or system whose failure to perform can be reasonably expect ed to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifi cations of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-rel ated requirements concerning the ir products and any use of diodes incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or s ystems-related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporate d and its representatives against any damages arisi ng out of the use of diodes incorporated pr oducts in such safety-critical, life suppor t devices or systems. copyright ? 2011, diodes incorporated www.diodes.com
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